rev.7.00 aug 10, 2005 page 1 of 9 BB504M built in biasing circuit mos fet ic vhf&uhf rf amplifier rej03g0837-0700 (previous ade-208-982e) rev.7.00 aug.10.2005 features ? built in biasing circuit; to reduce us ing parts cost & pc board space. ? low noise; nf = 1.0 db typ. at f = 200 mhz, nf = 1.75 db typ. at f =900 mhz ? high gain; pg = 30 db typ. at f = 200 mhz, pg = 22 db typ. at f = 900 mhz ? withstanding to esd; built in esd absorbing diode. withstand up to 200 v at c = 200 pf, rs = 0 conditions. ? provide mini mold packages; mpak-4 (sot-143rmod) outline renesas package code: plsp0004za-a (package name: mpak-4 ) 1 4 3 2 1. source 2. gate1 3. gate2 4. drain notes: 1. marking is ?ds??. 2. BB504M is individual type number of renesas bbfet.
BB504M rev.7.00 aug 10, 2005 page 2 of 9 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v ds 6 v gate1 to source voltage v g1s + 6 ?0 v gate2 to source voltage v g2s + 6 ?0 v drain current i d 30 ma channel power dissipation pch 150 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6 ? ? v i d = 200 a, v g1s = v g2s = 0 gate1 to source breakdown voltage v (br)g1ss +6 ? ? v i g1 = +10 a, v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss +6 ? ? v i g2 = +10 a, v g1s = v ds = 0 gate1 to source cutoff current i g1ss ? ? +100 na v g1s = +5 v, v g2s = v ds = 0 gate2 to source cutoff current i g2ss ? ? +100 na v g2s = +5 v, v g1s = v ds = 0 gate1 to source cutoff voltage v g1s(off) 0.6 0.85 1.1 v v ds = 5 v, v g2s = 4 v i d = 100 a gate2 to source cutoff voltage v g2s(off) 0.6 0.85 1.1 v v ds = 5 v, v g1s = 5 v i d = 100 a drain current i d(op) 13 16 19 ma v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 120 k ? forward transfer admittance |y fs | 24 29 34 ms v ds = 5 v, v g1 = 5 v, v g2s = 4 v r g = 120 k ? , f = 1 khz input capacitance c iss 1.7 2.1 2.5 pf output capacitance c oss 1.0 1.4 1.8 pf reverse transfer capacitance c rss ? 0.027 0.05 pf v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 120 k ? f = 1 mhz power gain (1) pg 25 30 ? db noise figure (1) nf ? 1.0 1.8 db v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 120 k ? f = 200 mhz power gain (2) pg 17 22 ? db noise figure (2) nf ? 1.75 2.3 db v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 120 k ? f = 900 mhz
BB504M rev.7.00 aug 10, 2005 page 3 of 9 test circuits ? dc biasing circuit for operating characteristics items (i d(op) , |yfs|, ciss, coss, crss, nf, pg) gate 1 source drain gate 2 r g a i d v g2 v g1 ? 200 mhz power gain, noise figure test circuit v g2 input(50 ? ) 1000p 36p 1000p l1 v d = v g1 r g bbfet rfc output(50 ? ) l2 1000p 10p max 1000p 1000p 47k 1sv70 1000p 1000p 1000p 47k 47k 120k v t v t unit resistance ( ? ) capacitance (f) 1sv70 l1 : 1mm enameled copper wire,inside dia 10mm, 2turns l2 : 1mm enameled copper wire,inside dia 10mm, 2turns rfc : 1mm enameled copper wire,inside dia 5mm, 2turns
BB504M rev.7.00 aug 10, 2005 page 4 of 9 ? 900 mhz power gain, noise figure test circuit input output c2 c1 l1 l2 l3 l4 s g1 g2 r1 r2 c3 r3 rfc c6 c5 c4 d v g2 v g1 v d c1, c2 c3 c4 to c6 r1 r2 r3 variable capacitor (10pf max) disk capacitor (1000pf) air capacitor (1000pf) 120 k ? 47 k ? 4.7 k ? : : : : : : 26 3 3 l2: 18 10 10 l4: 29 7 7 l3: ( 1mm copper wire) unit:mm 21 10 8 l1: 10 rfc : 1mm copper wire with enamel 4turns inside dia 6mm
BB504M rev.7.00 aug 10, 2005 page 5 of 9 200 150 100 50 0 50 100 150 200 20 16 12 8 4 0 12345 v ds = 5 v r g = 120 k ? channel power dissipation pch (mw) ambient temperature ta ( c) maximum channel power dissipation curve drain current vs. gate1 voltage gate1 voltage v g1 (v) drain current i d (ma) 4 v v g2s = 1 v 3 v 2 v 0 12345 30 24 18 12 6 v ds = 5 v r g = 120 k ? f = 1 khz gate1 voltage v g1 (v) forward transfer admittance vs. gate1 voltage forward transfer admittance |y fs | (ms) 4 v 2 v 3 v v g2 s = 1 v 0 1 2345 20 16 12 8 4 v g2s = 4 v v g1 = v ds drain current i d (ma) typical output characteristics drain to source voltage v ds (v) r g = 68 k ? 82 k ? 150 k ? 120 k ? 100 k ? 180 k ? 220 k ? 0 4 3 2 1 v ds = 5 v v g1 = 5 v v g2s = 4 v f = 200mhz noise figure vs. gate resistance noise figure nf (db) gate resistance r g (k ? ) 40 35 30 25 20 15 10 10 20 50 100 200 500 1000 v ds = 5 v v g1 = 5 v v g2s = 4 v f = 200 mhz power gain vs. gate resistance gate resistance r g (k ? ) power gain pg (db) 10 20 50 100 200 500 1000
BB504M rev.7.00 aug 10, 2005 page 6 of 9 0 4 3 2 1 v ds = 5v v g1 = 5 v v g2s = 4 v f = 900 mhz noise figure vs. gate resistance noise figure nf (db) gate resistance r g (k ? ) 40 35 30 25 20 15 10 v ds = 5 v v g1 = 5 v v g2s = 4 v f = 900 mhz power gain vs. gate resistance gate resistance r g (k ? ) power gain pg (db) 10 20 50 100 200 500 1000 10 20 50 100 200 500 1000 0 1 2 3 4 4 3 2 1 0 v ds = v g1 = 5 v r g = 120 k ? f = 1 mhz gate2 to source voltage v gs2 (v) input capacitance ciss (pf) input capacitance vs. gate2 to source voltage 4 0 10 20 30 40 50 3 2 1 0 gain reduction gr (db) gain reduction vs. gate2 acto source voltage gate2 to source voltage v gs2 (v) gain reduction gr (db) gain reduction vs. gate2 acto source voltage gate2 to source voltage v gs2 (v) drain current vs. gate resistance drain current i d (ma) gate resistance r g (k ? ) 30 20 10 0 10 20 50 100 200 500 1000 v g2s = 4 v v ds = v g1 =5 v v ds = v g1 = 5 v r g = 120 k ? f = 200 mhz 4 0 10 20 30 40 50 3 2 1 0 v ds = v g1 = 5 v r g = 120 k ? f = 900 mhz
BB504M rev.7.00 aug 10, 2005 page 7 of 9 v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 120 k ? , zo = 50 ? v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 120 k ? , zo = 50 ? v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 120 k ? , zo = 50 ? v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 120 k ? , zo = 50 ? 10 5 4 3 2 1.5 1 .8 ? 2 ? 3 ? 4 ? 5 ? 10 .6 .4 .2 0 ? .2 ? .4 ? .6 ? .8 ? 1 ? 1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 1 / div. 0 30 60 90 120 150 180 ? 150 ? 90 ? 60 ? 30 ? 120 scale: 0.004/ div. 0 30 60 90 120 150 180 ? 150 ? 90 ? 60 ? 30 ? 120 10 5 4 3 2 1.5 1 .8 ? 2 ? 3 ? 4 ? 5 ? 10 .6 .4 .2 0 ? .2 ? .4 ? .6 ? .8 ? 1 ? 1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 test condition: 50 to 1000 mhz (50 mhz step) test condition: 50 to 1000 mhz (50 mhz step) test condition: 50 to 1000 mhz (50 mhz step) test condition: 50 to 1000 mhz (50 mhz step) s11 parameter vs. frequency s21 parameter vs. frequency s12 parameter vs. frequency s22 parameter vs. frequency
BB504M rev.7.00 aug 10, 2005 page 8 of 9 s parameter (v ds = v g1 = 5v, v g2s = 4 v, r g = 120 k ? , zo = 50 ? ) s11 s21 s12 s22 f(mhz) mag. ang. mag. ang. mag. ang. mag. ang. 50 1.000 -3.3 2.80 175.9 0.00106 58.8 0.990 -2.4 100 0.993 -7.2 2.78 170.9 0.00171 75.7 0.992 -4.7 150 0.991 -10.9 2.77 166.1 0.00253 75.1 0.991 -7.2 200 0.984 -15.0 2.74 161.2 0.00356 77.4 0.987 -9.6 250 0.978 -19.0 2.72 156.5 0.00442 78.2 0.985 -12.2 300 0.970 -22.8 2.68 151.8 0.00485 80.0 0.982 -14.7 350 0.958 -26.7 2.64 147.2 0.00576 74.7 0.978 -17.1 400 0.954 -30.3 2.60 142.7 0.00642 71.7 0.973 -19.6 450 0.945 -33.8 2.56 138.6 0.00689 73.3 0.968 -22.0 500 0.932 -37.5 2.50 134.1 0.00712 71.8 0.963 -24.2 550 0.920 -40.6 2.46 129.8 0.00765 70.7 0.958 -26.7 600 0.910 -44.3 2.41 125.7 0.00804 69.9 0.952 -28.9 650 0.900 -47.5 2.37 121.6 0.00798 69.1 0.947 -31.3 700 0.887 -50.9 2.31 117.8 0.00787 67.8 0.942 -33.4 750 0.870 -54.4 2.27 113.6 0.00785 70.8 0.936 -35.8 800 0.863 -57.6 2.22 110.0 0.00758 73.3 0.929 -37.9 850 0.853 -60.9 2.18 105.8 0.00721 75.2 0.924 -40.3 900 0.839 -63.6 2.12 102.2 0.00694 75.8 0.917 -42.5 950 0.827 -66.5 2.07 98.6 0.00716 88.1 0.912 -44.5 1000 0.819 -70.1 2.04 94.9 0.00667 92.7 0.906 -46.7
BB504M rev.7.00 aug 10, 2005 page 9 of 9 package dimensions d e e 2 a qc aa b b b b 1 xsa a a 2 a 1 m e l h e l 1 l p a 3 ys pattern of terminal position areas s i 1 b 5 b 4 e 2 e e 1 i 1 a a 1 a 2 a 3 b b 1 b 2 b 3 c c 1 d e e e 2 h e l l 1 l p x y b 4 b 5 e 1 i 1 q 1.0 0 1.0 0.35 0.55 0.1 2.7 1.35 2.2 0.35 0.15 0.25 min nom dimension in millimeters reference symbol max 1.1 0.25 0.42 0.62 0.4 0.6 0.13 0.11 1.5 0.95 0.85 2.8 1.95 0.3 1.3 0.1 1.2 0.5 0.7 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.05 0.55 0.75 1.05 sc-61aa 0.013g mass[typ.] mpak-4 / mpak-4v plsp0004za-a renesas code jeita package code package name b 1 b 3 c 1 c b-b section b a-a section b 2 c 1 c ordering information part name quantity shipping container BB504Mds-tl-e 3000 178 mm reel, 8 mm emboss taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is a lways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme nt of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement 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